 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDZ7064N May 2004 General Description Combining Fairchild's 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Applications * DC/DC converters * Solenoid drive Pin 1 D D D D D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Parameter Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) Package Marking and Ordering Information Device Marking 7064N Device FDZ7064N Reel Size 13" (c)2004 Fairchild Semiconductor Corporation FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET Features * 13.5 A, 30 V. RDS(ON) = 8.0 m @ VGS = 4.5 V RDS(ON) = 7.0 m @ VGS = 10 V * Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 * Ultra-thin package: less than 0.8 mm height when mounted to PCB * 3.5 x 4 mm2 Footprint * High power and current handling capability. D F7064 Ratings 56 4.5 0.6 Tape width 12mm G S 30 12 13.5 60 2.2 -55 to +150 Units V V A W C C/W Quantity 3000 FDZ7064N Rev.D4 (W) FDZ7064N Electrical Characteristics Symbol BVDSS TA = 25 unless otherwise noted C Parameter Drain-Source Breakdown Voltage Test Conditions VGS = 0 V, ID = 250 A Min 30 Typ Max Units V Off Characteristics BVDSS TJ IDSS IGSSF IGSSR VGS(th) Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = -12 V, VDS = VGS, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 A 0.8 21 1 100 -100 1.2 -4.6 6.1 5.4 9.0 92 3843 522 209 8.0 7.0 13 2.0 mV/C A nA nA V mV/C m On Characteristics VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 13.5 A VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.5A, TJ =125C VDS = 10 V, ID = 13.5 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr S pF pF pF 20 18 114 32 43 ns ns ns ns nC nC nC 1.8 1.2 A V nS nC Dynamic Characteristics Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 10 9 71 18 VDS = 15 V, VGS = 4.5 V ID = 13.5 A, 31 8 7.4 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.8 A Voltage Diode Reverse Recovery Time IF = 13.5 A, diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 30 35 Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper a) 56 C/W when mounted on a 1in2 pad of 2 oz copper b) 119 C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2.Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ7064N Rev D4 (W) FDZ7064N Dimensional Outline and Pad Layout FDZ7064N Rev D4 (W) FDZ7064N Typical Characteristics 60 50 ID, DRAIN CURRENT (A) 40 30 20 2 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 3.0V 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 VGS = 2.5V 3.0V 3.5V 4.5V 6.0V 10V 2.0V 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 13.5A VGS = 10V ID =6.8 A 0.018 1.4 1.2 0.014 TA = 125oC 0.01 1 TA = 25oC 0.006 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 175 0.002 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC TA = 125oC 25 C o -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ7064N Rev D4 (W) FDZ7064N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13.5A 8 20V 6 VDS = 10V 15V CAPACITANCE (pF) 5000 CISS 4000 f = 1MHz VGS = 0 V 3000 4 2000 COSS 1000 CRSS 0 5 10 15 20 25 30 2 0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 100us RDS(ON) LIMIT 10 10s 1s 1ms 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100 40 SINGLE PULSE RJA = 119 C/W C TA = 25 30 1 0.1 VGS = 10V SINGLE PULSE RJA = 119oC/W TA = 25oC DC 20 10 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 119 C/W P(pk) t1 t2 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ7064N Rev D4 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
Price & Availability of FDZ7064N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |